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Remnants of Anderson localization in prethermalization induced by white noise
2017
We study the non-equilibrium evolution of a one-dimensional quantum Ising chain with spatially disordered, time-dependent, transverse fields characterised by white noise correlation dynamics. We establish pre-thermalization in this model, showing that the quench dynamics of the on-site transverse magnetisation first approaches a metastable state unaffected by noise fluctuations, and then relaxes exponentially fast towards an infinite temperature state as a result of the noise. We also consider energy transport in the model, starting from an inhomogeneous state with two domain walls which separate regions characterised by spins with opposite transverse magnetization. We observe at intermedia…
Hexakis(diethylacetamide)iron(II) hexahalorhenate(IV) ionic salts: X-ray structures and magnetic properties
2015
Two novel Fe<sup>II</sup>-Re<sup>IV</sup> compounds of general formula [Fe<sup>II</sup>(DEA)<inf>6</inf>][Re<sup>IV</sup>X<inf>6</inf>] where DEA = diethylacetamide and X = Cl (1) and Br (2) have been prepared and magnetostructurally characterised. Complexes 1 and 2 are isomorphic ionic salts that crystallise in the trigonal crystal system with space group R(-3). The rhenium(IV) ion in 1 and 2 is six-coordinate with six chloro (1) or bromo (2) ligands building a regular octahedral chromophore. The Fe<sup>II</sup> ion is also six-coordinate, and bonded to six oxygen atoms from six DEA molecules. [Fe<sup>…
Extensions and corona decompositions of low-dimensional intrinsic Lipschitz graphs in Heisenberg groups
2020
This note concerns low-dimensional intrinsic Lipschitz graphs, in the sense of Franchi, Serapioni, and Serra Cassano, in the Heisenberg group $\mathbb{H}^n$, $n\in \mathbb{N}$. For $1\leq k\leq n$, we show that every intrinsic $L$-Lipschitz graph over a subset of a $k$-dimensional horizontal subgroup $\mathbb{V}$ of $\mathbb{H}^n$ can be extended to an intrinsic $L'$-Lipschitz graph over the entire subgroup $\mathbb{V}$, where $L'$ depends only on $L$, $k$, and $n$. We further prove that $1$-dimensional intrinsic $1$-Lipschitz graphs in $\mathbb{H}^n$, $n\in \mathbb{N}$, admit corona decompositions by intrinsic Lipschitz graphs with smaller Lipschitz constants. This complements results that…
Savaime sklindančios aukštatemperatūrinės sintezės būdu gautų aliuminio oksinitrido miltelių ir jų keramikų optinės savybės
2021
The reported study was funded by RFBR according to the Research Project No. 19-08-00655. V.P. acknowledges the State Research Program ‘Aug-stas enerģijas fizika un paātrinātāju tehnoloģijas’ (Projekta Nr. VPP-IZM-CERN-2020/1-0002). The Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the H2020-WIDESPREAD-01-2016-2017-Teaming Phase2 under Grant Agreement No. 739508, Project CAMART2.
Photoluminescence-Based Spatially Resolved Temperature Coefficient Maps of Silicon Wafers and Solar Cells
2020
In this article, we present a method to obtain implied open-circuit voltage images of silicon wafers and cells at different temperatures. The proposed method is then demonstrated by investigating the temperature coefficients of various regions across multicrystalline silicon wafers and cells from different heights of two bricks with different dislocation densities. Interestingly, both low and high temperature coefficients are found in dislocated regions on the wafers. A large spread of temperature coefficient is observed at regions with similar performance at 298 K. Reduced temperature sensitivity is found to be correlated with the increasing brick height and is exhibited by both wafers and…
A Novel Method for Characterizing Temperature Sensitivity of Silicon Wafers and Cells
2019
In this paper, we present a novel method to obtain temperature dependent lifetime and implied-open-circuit voltage (iV OC ) images of silicon wafers and solar cells. First, the method is validated by comparing the obtained values with global values acquired from lifetime measurements (for wafers) and current-voltage measurements (for cells). The method is then extended to acquire spatially resolved images of iV OC temperature coefficients of silicon wafers and cells. Potential applications of the proposed method are demonstrated by investigating the temperature coefficients of various regions across multi-crystalline silicon wafers and cells from different heights of two bricks with differe…
High pressure crystal structures of orthovanadates and their properties
2020
Pressure-induced phase transitions in orthovanadates have led to interesting physical phenomena. The observed transitions usually involve large volume collapses and drastic changes in the electronic and vibrational properties of the materials. In some cases, the phase transitions implicate coordination changes in vanadium, which has important consequences in the physical properties of vanadates. In this Perspective, we explore the current knowledge of the behavior of MVO4 vanadates under compression. In particular, we summarize studies of the structural, vibrational, and electronic properties and a few illustrative examples of high-pressure research in the compounds of interest are discusse…
Polarization and acoustic properties of barium-modified lead-free potassium–sodium niobate ceramics
2017
The publication costs of this article were covered by the Estonian Academy of Sciences and the University of Tartu.
Preparation and dielectric properties of (Na 0.5 K 0.5 )NbO 3 ceramics with ZnO and CdO addition
2019
The sintering conditions, phase structure, and electrical properties of the ZnO and CdO doped (Na0.5K0.5)NbO3 (NKN) ceramics were investigated and discussed. All the samples were prepared by a solid state reaction method. The addition of 1 wt% CdO and ZnO as a sintering aid increases the density and lowering the sintering temperature. XRD analysis indicated perovskite structure with monoclinic symmetry. The investigated samples are good quality, the grains are well shaped without a glassy phase. The results of dielectric measurements revealed, that the dielectric properties of NKN based ceramics are stable in the wide temperature range.
Melting temperature prediction by thermoelastic instability: An ab initio modelling, for periclase (MgO)
2021
Abstract Melting temperature (TM) is a crucial physical property of solids and plays an important role for the characterization of materials, allowing us to understand their behavior at non-ambient conditions. The present investigation aims i) to provide a physically sound basis to the estimation of TM through a “critical temperature” (TC), which signals the onset of thermodynamic instability due to a change of the isothermal bulk modulus from positive to negative at a given PC-VC-TC point, such that (∂P/∂V)VC,TC = -(∂2F/∂V2) VC,TC = 0; ii) to discuss the case of periclase (MgO), for which accurate melting temperature observations as a function of pressure are available. Using first princip…